Texas Instruments LMC660CM/NOPB Handleiding

Texas Instruments Niet gecategoriseerd LMC660CM/NOPB

Lees hieronder de 📖 handleiding in het Nederlandse voor Texas Instruments LMC660CM/NOPB (24 pagina's) in de categorie Niet gecategoriseerd. Deze handleiding was nuttig voor 34 personen en werd door 2 gebruikers gemiddeld met 4.5 sterren beoordeeld

Download PDF

Pagina 1/24

LMC660

www.ti.com

SNOSBZ3D –APRIL 1998– REVISED MARCH 2013

LMC660 CMOS Quad Operational Amplier

Check for Samples: LMC660

FEATURES DESCRIPTION

The LMC660 CMOS Quad operational amplier is

• Rail-to-Rail Output Swing ideal for operation from a single supply. It operates

• Specied for 2 k and 600 LoadsΩ Ω from +5V to +15.5V and features rail-to-rail output

• High Voltage Gain: 126 dB swing in addition to an input common-mode range

that includes ground. Performance limitations that

• Low Input Oset Voltage: 3 mV have plagued CMOS ampliers in the past are not a

• Low Oset Voltage Drift: 1.3 V/°Cμproblem with this design. Input VOS, drift, and

• Ultra Low Input Bias Current: 2 fA broadband noise as well as voltage gain into realistic

loads (2 k and 600 ) are all equal to or better thanΩ Ω

• Input Common-Mode Range Includes V−

widely accepted bipolar equivalents.

• Operating Range from +5V to +15.5V Supply

This chip is built with TI's advanced Double-Poly

• ISS = 375 A/Amplier; Independent of Vμ+

Silicon-Gate CMOS process.

• Low Distortion: 0.01% at 10 kHz

See the LMC662 datasheet for a dual CMOS

• Slew Rate: 1.1 V/ sμoperational amplier with these same features.

APPLICATIONS

• High-Impedance Buer or Preamplier

• Precision Current-to-Voltage Converter

• Long-Term Integrator

• Sample-and-Hold Circuit

• Peak Detector

• Medical Instrumentation

• Industrial Controls

• Automotive Sensors

Connection Diagrams

Figure 1. 14-Pin SOIC/PDIP Figure 2. LMC660 Circuit Topology (Each

Amplier)

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

Products conform to specications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

LMC660

SNOSBZ3D – APRIL 1998 – REVISED MARCH 2013

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings (1)

Dierential Input Voltage ±Supply Voltage

Supply Voltage 16V

Output Short Circuit to V+See(2)

Output Short Circuit to V−See(3)

Lead Temperature (Soldering, 10 sec.) 260°C

Storage Temp. Range 65°C to +150°C−

Voltage at Input/Output Pins (V+) + 0.3V, (V−) 0.3V−

Current at Output Pin ±18 mA

Current at Input Pin ±5 mA

Current at Power Supply Pin 35 mA

Power Dissipation See(4)

Junction Temperature 150°C

ESD tolerance (5) 1000V

(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional, but do not ensure specic performance limits. For ensured specications and test

conditions, see the Electrical Characteristics. The ensured specications apply only for the test conditions listed.

(2) Do not connect output to V

+when V+is greater than 13V or reliability may be adversely aected.

(3) Applies to both single supply and split supply operation. Continuous short circuit operation at elevated ambient temperature and/or

multiple Op Amp shorts can result in exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of ±30

mA over long term may adversely aect reliability.

(4) The maximum power dissipation is a function of T

J(MAX),θJA, and TA. The maximum allowable power dissipation at any ambient

temperature is PD= (TJ(MAX) −TA)/θJA

(5) Human Body Model is 1.5 k in series with 100 pF.Ω

Operating Ratings

Temperature Range

LMC660AI 40°C T− ≤ J≤+85°C

LMC660C 0°C T≤J≤+70°C

Supply Voltage Range 4.75V to 15.5V

Power Dissipation See(1)

Thermal Resistance (θJA)(2)

14-Pin SOIC 115°C/W

14-Pin PDIP 85°C/W

(1) For operating at elevated temperatures the device must be derated based on the thermal resistance θ

JA with PD= (TJ−TA)/θJA.

(2) All numbers apply for packages soldered directly into a PC board.

Product Folder Links: LMC660

LMC660

www.ti.com

SNOSBZ3D –APRIL 1998– REVISED MARCH 2013

DC Electrical Characteristics

Unless otherwise specied, all limits ensured for TJ= 25°C. limits apply at the temperature extremes. VBoldface += 5V, V−=

0V, VCM = 1.5V, VO= 2.5V and RL> 1M unless otherwise specied.Ω

LMC660AI LMC660C

Parameter Test Conditions Typ(1) Units

Limit (1) Limit(1)

Input Oset Voltage 1 3 6 mV

3.3 6.3 max

Input Oset Voltage Average Drift 1.3 V/°Cμ

Input Bias Current 0.002 pA

4 2 max

Input Oset Current 0.001 pA

2 1 max

Input Resistance >1 TeraΩ

Common Mode 0V V≤CM ≤12.0V 83 70 63 dB

Rejection Ratio V+= 15V min68 62

Positive Power Supply 5V V≤+≤15V 83 70 63 dB

Rejection Ratio VO= 2.5V min68 62

Negative Power Supply 0V V≤−≤ −10V 94 84 74 dB

Rejection Ratio min83 73

Input Common-Mode V+= 5V & 15V 0.4 0.1 0.1 V− − −

Voltage Range For CMRR 50 dB max≥0 0

V+−1.9 V+−2.3 V+−2.3 V

V+−2.5 V+−2.4 min

Large Signal RL= 2 kΩ(2) 2000 440 300 V/mV

Voltage Gain Sourcing min400 200

Sinking 500 180 90 V/mV

120 80 min

RL= 600Ω(2) 1000 220 150 V/mV

Sourcing min200 100

Sinking 250 100 50 V/mV

60 40 min

Output Swing V+= 5V 4.87 4.82 4.78 V

RL= 2 k to VΩ+/2 min4.79 4.76

0.10 0.15 0.19 V

0.17 0.21 max

V+= 5V 4.61 4.41 4.27 V

RL= 600 to VΩ+

/2 min4.31 4.21

0.30 0.50 0.63 V

0.56 0.69 max

V+= 15V 14.63 14.50 14.37 V

RL= 2 k to VΩ+/2 min14.44 14.32

0.26 0.35 0.44 V

0.40 0.48 max

V+= 15V 13.90 13.35 12.92 V

RL= 600 to VΩ+

/2 min13.15 12.76

0.79 1.16 1.45 V

1.32 1.58 max

(1) Typical values represent the most likely parametric norm. Limits are specied by testing or correlation.

(2) V

+= 15V, VCM = 7.5V and RLconnected to 7.5V. For Sourcing tests, 7.5V V≤O≤ ≤11.5V. For Sinking tests, 2.5V VO≤7.5V.

Product Folder Links: LMC660

Product specificaties

Merk:	Texas Instruments
Categorie:	Niet gecategoriseerd
Model:	LMC660CM/NOPB
Breedte:	8.75 mm
Diepte:	4 mm
Hoogte:	1.5 mm
Breedte verpakking:	8 mm
Diepte verpakking:	495 mm
Hoogte verpakking:	4.064 mm
Soort:	Operationele versterker
Type verpakking:	SSOIC
Aantal per verpakking:	55 stuk(s)
Temperatuur bij opslag:	-65 - 150 °C
Aantal kanalen:	4 kanalen
Totale harmonische vervorming (THD):	0.01 procent
Bandbreedte:	1.4 MHz
Bedrijfstemperatuur (T-T):	0 - 70 °C
Aantal pinnen:	14
Breedte (met pennen):	8.75 mm
Diepte (met pennen):	6.2 mm
Hoogte (met pennen):	1.75 mm