Microchip MIC4101 Handleiding

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 2022 Microchip Technology Inc. and its subsidiaries DS20006699A-page 1

MIC4100/1

Features

• Bootstrap Supply Voltage to 118V DC

• Supply Voltage up to 16V

• Drives High- and Low-Side N-Channel MOSFETs

with Independent Inputs

• CMOS Input Thresholds (MIC4100)

• TTL Input Thresholds (MIC4101)

• On-Chip Bootstrap Diode

• Fast 30 ns Propagation Times

• Drives 1000 pF Load with 10 ns Rise and Fall

Times

• Low Power Consumption

• Supply Undervoltage Protection

• 3Ω Pull-Up, 3Ω Pull-Down Output Resistance

• Space Saving 8-Lead SOIC Package

• –40°C to +125°C Junction Temperature Range

Applications

• High Voltage Buck Converters

• Push-Pull Converters

• Full- and Half-Bridge Converters

• Active Clamp Forward Converters

General Description

The MIC4100 and MIC4101 are high frequency, 100V

half-bridge MOSFET driver ICs that feature fast 30 ns

propagation delay times. The low-side and high-side

gate drivers are independently controlled and matched

to within 3 ns typical. The MIC4100 has CMOS input

thresholds and the MIC4101 has TTL input thresholds.

The MIC4100/1 include a high voltage internal diode

that charges the high-side gate drive bootstrap

capacitor.

A robust, high-speed, and low-power level shifter

provides clean level transitions to the high-side output.

The robust operation of the MIC4100/1 ensure the

outputs are not affected by supply glitches, HS ringing

below ground, or HS slewing with high speed voltage

transitions. Undervoltage protection is provided on both

the low-side and high-side drivers.

The MIC4100/1 is available in the 8-lead SOIC

package with a junction operating range from

–40°C to +125°C.

Typical Application Schematic

MIC4100/1

SOIC-8

PWM

Controller LI

VDD

9V to 16V Bias

100V Supply

GND

OUT

100V Half-Bridge MOSFET Drivers

MIC4100/1

DS20006699A-page 2 2022 Microchip Technology Inc. and its subsidiaries

Functional Block Diagram

MIC4100/1

DRIVER

SHIFT

DRIVER

LEVEL

UVLO

 2022 Microchip Technology Inc. and its subsidiaries DS20006699A-page 3

MIC4100/1

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage (VDD, VHB – VHS) .............................................................................................................. –0.3V to +18V

Input Voltages (VLI, VHI)....................................................................................................................–0.3V to V

DD + 0.3V

Voltage on LO (VLO)..........................................................................................................................–0.3V to V

DD + 0.3V

Voltage on HO (VHO).................................................................................................................V

HS – 0.3V to V

HB + 0.3V

Voltage on HS (Continuous) ........................................................................................................................–1V to +110V

Voltage on HB ......................................................................................................................................................... +118V

Average Current in VDD to HB Diode ....................................................................................................................100 mA

ESD Rating .............................................................................................................................................................Note 1

Operating Ratings ‡

Supply Voltage (VDD) .................................................................................................................................... +9V to +16V

Voltage on HS ............................................................................................................................................. –1V to +100V

Voltage on HS (Repetitive Transient) .......................................................................................................... –5V to +105V

HS Slew Rate........................................................................................................................................................ 50 V/ns

Voltage on HB .............................................................................................................................. V

HS + 8V to VHS + 16V

and ............................................................................................................................................. V

DD – 1V to VDD + 100V