Microchip AT9919 Handleiding


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2016-2022 Microchip Technology Inc. and its subsidiaries DS20005595B-page 1
AT9919
Features
AEC-Q100 Qualified
Hysteretic Control with High-side Current Sensing
Wide Input Voltage Range: 4.5V to 40V
>90% Efficiency
Typical ±5% LED Current Accuracy
Up to 2 MHz Switching Frequency
Adjustable Constant LED Current
Analog or Pulse-Width Modulation (PWM) Control
Signal for PWM Dimming
Overtemperature Protection
–40ºC to +125ºC Operating Temperature Range
Applications
LED Lighting Applications
Automotive Applications
General Description
AT9919 is a PWM controller IC designed to drive
high-brightness LEDs using a buck topology. It
operates from an input voltage of 4.5 VDC to 40 VDC
and employs hysteretic control with a high-side current
sense resistor to set the constant output current.
The operating frequency range can be set by selecting
the proper inductor. Operation at high switching
frequency is possible since the hysteretic control
maintains accuracy even at high frequencies. This
permits the use of small inductors and capacitors,
minimizing space and cost in the overall system.
LED brightness control is achieved with PWM dimming
from an analog or PWM input signal. Unique PWM
circuitry allows true constant color with a high dimming
range. The dimming frequency is programmed using a
single external capacitor.
AT9919 comes in a small, 8-Lead WDFN package and
is qualified for LED lighting applications.
AT9919 passes the automotive AEC-Q100 reliability
testing.
Package Type
8-Lead WDFN
(Top View)
See Table 2-1 for pin information.
8
1
2
3
4
7
6
5
CS
VIN
GATE
RAMP
ADIM
GND
VDD
DIM
GND
Hysteretic Buck High-Brightness LED Driver with
High-Side Current Sensing
AT9919
DS20005595B-page 2
2016-2022 Microchip Technology Inc. and its subsidiaries
Functional Block Diagram
Typical Application Circuit
CURRENT
SENSE
COMPARATOR
UVLO
COMPARATOR
GATE
DRIVER
VIN VDD
CS
RAMP
ADIM
GND
DIM
GATE
AT9919
PWM RAMP
0.1~1.9V
-
+
+
-
BANDGAP
REF
+
-
REGULATOR
CIN
0 - 2.0V
AT9919
VIN
VDD
GATE
GND
CS
RAMP
ADIM
DIM
RSENSE L
&5$03 &9''
2016-2022 Microchip Technology Inc. and its subsidiaries DS20005595B-page 3
AT9919
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings†
VIN and CS to GND ....................................................................................................................................-0.3V to +45V
VDD, GATE, RAMP, DIM, ADIM to GND.......................................................................................................-0.3V to +6V
CS to VIN......................................................................................................................................................-1V to +0.3V
Operating Temperature Range.............................................................................................................. -40°C to +125°C
Junction Temperature.............................................................................................................................................150°C
Storage Temperature Range....................................................................................................................-65°C to 150°C
Continuous Power Dissipation (TA = +25°C) .......................................................................................................... 1.6W
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage
to the device. This is a stress rating only, and functional operation of the device at those or any other con-
ditions above those indicated in the operational sections of this specification is not intended. Exposure to
maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
Electrical Specifications: VIN = 12V, VDIM = VDD, VRAMP = GND, CVDD = 1 µF, RSENSE = 0.5Ω, TA = TJ = -40ºC to
+125ºC ( )Note 1 unless otherwise noted.
Parameter Sym. Min. Typ. Max. Unit Conditions
Input DC Supply Voltage Range V
IN 4.5 40 V DC input voltage
Internally Regulated Voltage VDD 4.5 5.5 V VIN = 6V to 40V
Supply Current IIN 1.5 mA GATE open
Shutdown Supply Current IIN, SDN 900 µA DIM < 0.7V
Current Limit IIN, LIM
30 — mA VIN = 4.5V, VDD = 0V
8 — VIN = 4.5V, VDD = 4V
Oscillator Frequency fOSC 2 MHz
VDD Undervoltage Lockout
Threshold UVLO 4.5 V VDD rising
VDD Undervoltage Lockout
Hysteresis UVLOHYST 500 mV VDD falling
SENSE COMPARATOR
Sense Voltage Threshold High VCS(HI) 198 230 257 mV (VIN VCS) rising
Sense Voltage Threshold Low VCS(LO) 147 170 195 mV (VIN – VCS) falling
Average Reference Voltage VCS(AVG) 186 200 214 mV VCS(AVG) = 0.5VCS(HI) + 0.5VCS(LO)
Propagation Delay to Output
High tDPDH 70 ns Falling edge of
VIN – VCS = VRS(LO) – 70 mV
Propagation Delay to Output
Low t
DPDL 70 ns Rising edge of
VIN – VCS = VRS(HI) + 70 mV
Current Sense Input Current ICS 1 µA VIN – VCS = 200 mV
Current Sense Threshold
Hysteresis VCS(HYST) 56 80 mV
DIM INPUT
Pin DIM Input High Voltage VIH 2.2 — — V
Pin DIM Input Low Voltage VIL — 0.7 V
Turn-on Time tON 100 ns DIM rising edge to
VGATE = 0.5 x VDD , CGATE = 2 nF
Turn-off Time tOFF 100 ns DIM falling edge to
VGATE = 0.5 x VDD , CGATE = 2 nF
Note 1: Limits obtained by design and characterization.
2: For design guidance only


Product specificaties

Merk: Microchip
Categorie: Niet gecategoriseerd
Model: AT9919

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